Dominique
Bayart, “Prospects for Cladding-Pumped Erbium-Doped Fiber Amplifiers
(CP-EDFA)”, Invited paper We.2.3.1, European Conference on Optical
Communication, ECOC 2004, September 5-9 2004, Stockholm, Sweden.
Jürgen Weber, Márc Tibor Kelemen, Michael Mikulla and Günter Weimann, “5
W high-efficiency high-brightness tapered diode lasers at 980 nm,”
Conference on Lasers and Electro-Optics Europe, CLEO Europe 2005, 12-17 June
2005, Munich, Germany.
Marc T.
Kelemen, Juergen Weber, Michael Mikulla and Guenter Weimann, “High-Power
High-Brightness Tapered Diode Lasers and Amplifiers,” Presented at Photonics
West 2005.
D. Gorpas,
C. Politopoulos, E. Alexandratou, M. Kyriazi and D. Yova, “A CCD-Based 3-D
Skin Tumour Imaging System for PDT Assessment,” submitted in BIOS 2006,
21-26 January, Photonics West, California.
Prof. D.
Yova, Lecture “High Power Diode Lasers in Otolaryngology,” in Seminar
“Advanced Laser Technology in Otolaryngology”, Natl. Techn. Univ. of Athens and
Otolaryngology Clinics, Ippokrateion Hospital, 8 June 2005.
Jens W. Tomm, Axel Gerhardt, and Tran Quoc Tien, Mark L. Biermann, M. O.
Manasreh, and B. S. Passmore (invited
Talk) “Spectroscopic analysis of external
stresses in semiconductor quantum-well materials,” Material Research
Society Fall Meeting 2004, Boston MA, Invited talk B4.4, Tuesday, November
30th, 2004.
Jens W. Tomm, Tran Quoc Tien, Myriam Oudart and Julien Nagle, “Aging
properties of High-Power Diode Laser Arrays: Relaxation of Packaging-Induced
Strains and Corresponding Defect Creation Scenarios,” Presented at
CLEO®/Europe-EQEC 2005, 15th June 2005, CB6-1-WED, Munich, Germany.
Jens W.
Tomm, Tran Quoc Tien, Myriam Oudart and Julien Nagle “Strain relaxation and
defect creation in diode laser bars” 11th International Conference on
Defects - Recognition, Imaging and Physics in Semiconductors (DRIP XI) 15 - 19
September 2005 in Beijing (China).
P. M.
Petersen, “Nonlinear optical effects in high power diode lasers,” FBH,
Forschungsverbund, Berlin, Germany, 19 November 2004.
Bercha, F.
Dybala, K. Komorowska, P. Adamiec, R. Bohdan, W. Trzeciakowski, J.A. Gupta, P.J. Barrios, G. Pakulski, A. Delage,
and Z.R. Wasilewski, “Pressure tuning of GaInNAs laser diodes in external
cavity,” presented at Photonics West (2005), Proceedings SPIE
P.J. Bream, S. Sujecki and E.C. Larkins, “Energy Band Calculations for
Dynamic Gain Models in Semiconductor Quantum Well Lasers,” accepted for
Numerical Modelling of Semiconductor Optoelectronic Devices (NUSOD 2005),
Berlin, September 19-22.
S. Sujecki, E.C. Larkins, “Bent waveguide laser cavities,”
accepted for SPIE International Congress on Optics and Optoelectronics, Warsaw
2005.
S. Sujecki,
L. Borruel, J. Wykes, P. Moreno, P. Sewell, D. Rodriguez, T.M. Benson, I.
Esquivias and E.C. Larkins, “Quasi-3D numerical analysis of asymmetries in
980 nm tapered laser diodes,” presented at the International Conference on
Transparent Optical Networks (ICTON 2004), Warsaw, 4-8 July 2004, pp. 295-8.
N. Michel,
M. Krakowski, M. Calligaro, M. Lecomte, O. Parillaud, L. Borruel, I. Esquivias,
P. Moreno, S. Sujecki, J. Wykes and E.C. Larkins, “High-power and
high-brightness lasers with an Al-free active region at 915 nm,” European
Conference on Optical Communications (ECOC 2005), Glasgow, Scotland, 25-29
September 2005.
N. Michel,
M. Calligaro, M. Lecomte, O. Parillaud and M. Krakowski, “High-power diode
lasers with an aluminium-free active region at 915 nm,” SPIE Europe
Symposium on Optics and Photonics in Security and Defence, 16-29 September
2005, Bruges, Belgium.
M. Krakowski, M. Calligaro, N. Michel, M. Lecomte, O. Parillaud, L. Borruel, I. Esquivias, P. Moreno, S. Sujecki, J. Wykes and E.C. Larkins, “Lasers évasés de forte puissance et forte brillance sans aluminium dans la région active à 915 nm,” Neuvième Colloque sur les Lasers et l'Optique Quantique (COLOQ 9), Dijon, France, 7-9 September 2005.
O. Parillaud, M. Lecomte, L. Teisseire, B. Gérard, F.-J. Vermersch, N. Michel, S. Bansropun, M. Calligaro and M. Krakowski, “Al-free active region structures for High-power 852nm and 915nm emitting laser diodes,” presented at the European Workshop on Metallorganic Vapor Phase Deposition (EW MOVPE XI), Lausanne, Switzerland, 5-8 June 2005.
N. Michel,
M. Calligaro, M. Krakowski, S. Deubert, J.-P. Reithmaier, and A. Forchel, “980
nm small aperture tapered laser (1W CW, M2~3) and tapered arrays
(>3W CW): comparison between GaInAs/(Al)GaAs quantum dot and quantum well
structures,” Proc. SPIE Vol. 5738, pp. 355-364, Novel In-Plane
Semiconductor Lasers IV; Carmen Mermelstein, David P. Bour; Eds., Photonics
West 2005; 22-27 January 2005, San Jose (USA).
N. Michel, M. Calligaro, M. Krakowski, S. Deubert, H. P. Reithmaier, A. Forchel, “Lasers évasés guidés par l'indice à 980 nm, de forte brillance (1 W CW, M2 = 2.9) à boîtes quantiques en GaInAs/(Al)GaAs,” 23èmes Journées Nationales d'Optique Guidée 2004 (JNOG 2004), Paris, 25-27 octobre 2004, Recueil des Communications, édité par la Société Française d'Optique, pp. 43-45.
M.
Krakowski, M. Calligaro, C. Larat, M. Lecomte, N. Michel, O. Parillaud, B.
Boulant, T. Fillardet, “High-brightness tapered laser diode bars and optical
modules with Al-free active region (lambda = 980 nm),” Proc. SPIE Vol.
5620, p. 128-136, Solid State Laser Technologies and Femtosecond Phenomena;
Jonathan A. Terry, W. Andrew Clarkson; Eds., SPIE European Symposium on Optics
and Photonics for Defense and Security, 25-28 October 2004, London (UK).
H.
Odriozola, L. Borruel, J.M.G. Tijero, I. Esquivias, S. Sujecki, E.C. Larkins, “Losses of the unstable cavity in tapered
laser diodes: estimation from numerical simulations,” submitted to Numerical Modelling of
Semiconductor Optoelectronic Devices (NUSOD 2005), Berlin, September 19-22.
H.Odriozola,
L.Borruel, J.M.G.Tijero, I.Esquivias, S.Sujecki, E.C.Larkins: Pérdidas de la cavidad inestable en diodos
láser acampanados. 4ª Reunión Española de Optoelectrónica, (OPTOEL 05),
Elche (Alicante), Spain, July 13-15.
L. Borruel,
I. Esquivias, J. M. García-Tijero, H. Odriozola, M. Krakowski, S. C. Auzanneau,
N. Michel, S. Sujecki, and E C Larkins, “Design
and Fabrication of High Brightness Semiconductor Tapered Lasers with a
Clarinet-like Shape,” CLEO-Europe 2005, Munich, June 12-17.
J.M.G.Tijero,
D.Rodríguez, L.Borruel, S.Sujecki, E.C.Larkins and I.Esquivias: Optimization of epitaxial layer design for
high brightness tapered lasers. Photonics West 2005, SPIE Conf. Physics and
Simulation of Optoelectronic Devices, San Jose, CA, USA, January 22-27.
R.
Debusmann, S. Deubert, J.P. Reithmaier and A. Forchel, “High Power
InAs/GaInAs Quantum Dot Lasers with Enhanced Temperature Stability for Uncooled
Pump Applications,” submitted to the 31st European Conference on Optical
Communication (ECOC) 25-29 September 2005, Glasgow, UK
M. Zorn, H. Wenzel, A. Knigge, U. Zeimer, M. Weyers "Comparison
of AlGaAs and AlInP cladding layers for red edge-emitting lasers"
Proc. 10th European Workshop on Metal-Organic Vapour Phase Epitaxy, June 2003,
Lecce, Italy, PS.V.09, ISBN 88-8305-007-X